METHOD FOR FORMING RESIST PATTERN, RESIST PATTERN SPLITTING AGENT, SPLIT PATTERN IMPROVING AGENT, AND RESIST PATTERN SPLIT MATERIAL

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, and others.SOLUTION: The resist pattern forming method includes: a step A of forming a positive resist film on a support, exposing the positive resist film, and developing the resist film with an alkali to form a first resist pattern; a step B of applying a solution containing an acid or a thermoacid generator to cover the first resist pattern to form a first layer; a step C of applying a solution containing a solvent to cover the first layer; a step D of heating a structure including the first resist pattern obtained in the above steps A to C to change the solubility of the first resist pattern with a developer by an action of the acid in the first layer; and a step E of developing the coated first resist pattern with an organic solvent to remove a region other than the region where the solubility of the first resist pattern with the developer is changed, so as to form a second resist pattern.SELECTED DRAWING: None