| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus for improving an etching rate by reducing the leakage of plasma.SOLUTION: A plasma processing apparatus includes a cylindrical electrode 10 which has an opening 11 provided at one end and inside which process gas is introduced. An RF power source 15 for impressing a high frequency voltage is connected to the cylindrical electrode 10. On the opening 11 side of the cylindrical electrode 10, a conveyance path P of a workpiece W is provided which communicates with the inside of the cylindrical electrode 10. In a portion communicating with the inside of the cylindrical electrode 10 of the conveyance path P, that is to say, in the vicinity of a communication part C, magnetic members 17, 18 are provided which forms magnetic fields B1, B2 in a direction perpendicular to the conveyance path P.SELECTED DRAWING: Figure 4 |
