| 摘要 |
PROBLEM TO BE SOLVED: To improve a trade-off relationship between high breakdown voltage and low on-resistance.SOLUTION: A semiconductor device of an embodiment comprises: a first semiconductor region; a second semiconductor region selectively provided on the first semiconductor region; a third semiconductor region selectively provided on the second semiconductor region; a first electrode which is provided on the third semiconductor region and electrically connected to the third semiconductor region; a second electrode which is provided below the first semiconductor region and electrically connected to the first semiconductor region; a third electrode which is provided on the first semiconductor region, the second semiconductor region and the third semiconductor region via an insulation film; and a fourth electrode which is provided closer to the second electrode than the third electrode, and provided on the first semiconductor region via the insulation film, and has three and more widths in a direction crossing a direction from the third electrode toward the second electrode, in which the width gradually decreases from the third electrode side with the decreasing distance toward the second electrode.SELECTED DRAWING: Figure 1 |
