GROUP III NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor device having a super junction structure; and provide a manufacturing method of the group III nitride semiconductor device.SOLUTION: A group III nitride semiconductor device 2 includes as a group III nitride semiconductor structure 20: a plurality of first 1p semiconductor regions 21ap each having a first crystal orientation and a p-type conductivity type; and a first 2n semiconductor regions 21bn which are arranged among the first 1p semiconductor regions 21ap and adjacent to the first 1p semiconductor regions 21ap and has a second crystal orientation different from the first crystal orientation and an n-type conductivity type. The first 1p semiconductor regions 21ap and the first 2n semiconductor regions 21bn include p/n regions 21pn which lie from one principal surface 21m to another principal surface 21n, and further include a Schottky electrode 30 which is arranged on the one principal surface 21m side of the p/n regions 21pn and electrically connected to at least some of the first 1p semiconductor regions 21ap and forms Schottky contact with the first 2n semiconductor regions 21bn.SELECTED DRAWING: Figure 5