| 摘要 |
PROBLEM TO BE SOLVED: To efficiently remove chemical atmosphere on a substrate.SOLUTION: In a substrate processing apparatus 1, when a shield plate movement mechanism 53, a chemical supply part and a substrate rotation mechanism 35 are controlled by a control part 71, a chemical is supplied to a top face 91 of a substrate 9 and a chemical treatment is performed in a state where a top plate 51 is located at a first relative position in a vertical direction with respect to the substrate 9. And a washing fluid is supplied to the top face 91 of the substrate 9 and a washing treatment is performed in a state where the top plate 51 is located at a second relative position closer to the substrate 9 than the first relative position. Further, the substrate 9 is rotated and a drying treatment is performed on the substrate 9 in a state where the top plate 51 is located at a third relative position closer to the substrate 9 than the second relative position. By doing this, a chemical atmosphere on the substrate 9 can be efficiently removed during the washing treatment. As a result, generation of particles caused by the chemical atmosphere on the substrate 9 can be inhibited in the drying treatment.SELECTED DRAWING: Figure 1 |
