| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which when laminating a semiconductor chip with a through electrode on a semiconductor wafer, suppresses voids and causes the through electrode to be favorably conducted and suppresses lengths of burrs projecting around the semiconductor chip.SOLUTION: A semiconductor device manufacturing method comprises: a first process of temporarily placing on a semiconductor wafer 5, a semiconductor chip 2 with a through electrode which has a semiconductor layer with adhesive film 1 being attached, by using a first pressing tool 7 while heating the semiconductor chip 2 at a temperature equal to or higher than a solder melting temperature; and a second process of heating the semiconductor chip 2 temporarily placed on the semiconductor wafer 5 by using a second pressing tool 8 at a temperature equal to or higher than the solder melting temperature to cause the through electrode (via) 4 having the semiconductor layer 3 to be electrically continuous. When assuming that a length of one side of the semiconductor chip 2 is A, a length of one side of the first pressing tool 7 is B and a length of one side of the second pressing tool 8 is C, a ratio B/A is 0.9 and over and a ratio C/A is 0.85 and under.SELECTED DRAWING: Figure 2 |
