| 摘要 |
PROBLEM TO BE SOLVED: To provide a reflective mask blank having a phase shift film of thin film, excellent in wash-resistance as a whole film, and shifting the phase of EUV light.SOLUTION: A phase shift film 15 of a reflective mask blank consists of a multilayer film including one or a plurality of first layers 15a and one or a plurality of second layers 15b. The first layer 15a contains a metal material (Ta, Cr, or the like) selected from metal materials having a refractive index n of 0.95 or less at a wavelength of 13.5 nm. The second layer 15b contains a metal material (Mo, Ru, Pt, Pd, Ag, Au, or the like) selected from metal materials having a refractive index n of 0.95 or less at a wavelength of 13.5 nm, different from those of the first layer 15a. On the interface of the first layer 15a and second layer 15b and in the vicinity thereof, a metal diffusion region R1 is formed at a ratio of 25% or more for the total thickness of one first layer 15a and one second layer 15b.SELECTED DRAWING: Figure 2 |
