| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a Group III nitride semiconductor light-emitting element, by which the occurrence of a pit can be suppressed in growing a semiconductor layer on a substrate in which convex portions account for a large percentage of area, and the crystallinity of Group III nitride semiconductor can be enhanced.SOLUTION: A method for manufacturing a Group III nitride semiconductor light-emitting element, comprises a semiconductor layer formation process and a substrate preparation process. The semiconductor layer formation process includes: a first semiconductor layer formation step where a non-doped layer 131 is formed on a buffer layer 120 at a first pressure; and a second semiconductor layer formation step where a non-doped layer 132 and an n-type contact layer 133 are formed over the non-doped layer 131 at a second pressure. In the substrate preparation step, an area occupied by plural convex portions 112 in a first face 110a is made within a range of 50-90%. In the first semiconductor layer formation step, the first pressure is within a range of 20-50 kPa. In the second semiconductor layer formation step, the second pressure is within a range of 1-20 kPa.SELECTED DRAWING: Figure 5 |
