| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistance change type storage device that may be manufactured easily.SOLUTION: A storage device includes: a substrate; at least one active area AA which is formed on the substrate and extends in a third direction; three gate electrodes GC which are provided on the active area via an insulation film and cross the third direction, one of the three gate electrodes forming a dummy transistor; and at least two or more upper-layer wiring M2 and lower-layer wiring M1 which are provided on the active area via an insulation film and extend in a first direction crossing a second direction and the third direction. The lower-layer wiring M1 is connected to the active area AA via a contact V1, and the upper-layer wiring M2 is connected to the active area AA via a resistance change element RW and a contact V2.SELECTED DRAWING: Figure 3 |
