| 摘要 |
SOLUTION: There are provided polishing pads 1a and 1b having polishing surfaces 4a and 4b for polishing a polishing object such as a semiconductor wafer. At least one of a water repellent pattern P1 being a water repellency-treated first area and a hydrophilicity-treated hydrophilic pattern P1' is provided on the polishing surfaces 4a and 4b and a part except for the pattern becomes a second area P0 different in hydrophilicity. The pattern may be a radial shape, a concentric shape or a lattice shape.EFFECT: Since the water repellent patter P1 or the hydrophilic pattern P1' as a first area different in hydrophilicity and the second area P0 are provided on a polishing surface, a holding property and a discharge property of slurry can be controlled by water repellency of the water repellent pattern and hydrophilicity of the hydrophilic patter, so that control of the slurry distribution in the polishing surface and the polishing rate-improving effect can be provided.SELECTED DRAWING: Figure 2 |
