HEAT TREATING METHOD OF SIC INGOT

摘要

The present invention relates to a heat treatment method of a silicon carbide ingot and, more specifically, to a method for thermally treating a silicon carbide ingot before being processed with a wafer, for preventing the crack due to thermal stress of the growth-completed silicon carbide. The heat treatment method of a silicon carbide ingot comprises the steps of: covering a silicon carbide ingot with an insulating material; inserting the silicon carbide ingot in a crucible; and thermally treating the silicon carbide ingot.