发明名称 |
ELECTRICALLY RECONFIGURABLE INTERPOSER WITH BUILT-IN RESISTIVE MEMORY |
摘要 |
An integrated interposer may include a substrate and a resistive-type non-volatile memory (NVM) array(s). The integrated interposer may also include a contact layer on a first surface of the substrate. The contact layer may include interconnections configured to couple the resistive-type NVM array(s) to a die(s). The resistive -type NVM array(s) may be partially embedded within the contact layer of the integrated interposer. |
申请公布号 |
WO2016069105(A1) |
申请公布日期 |
2016.05.06 |
申请号 |
WO2015US48165 |
申请日期 |
2015.09.02 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
LU, YU;RAMACHANDRAN, VIDHYA;KANG, SEUNG HYUK |
分类号 |
H01L25/065;H01L23/498;H01L23/538 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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