发明名称 ELECTRICALLY RECONFIGURABLE INTERPOSER WITH BUILT-IN RESISTIVE MEMORY
摘要 An integrated interposer may include a substrate and a resistive-type non-volatile memory (NVM) array(s). The integrated interposer may also include a contact layer on a first surface of the substrate. The contact layer may include interconnections configured to couple the resistive-type NVM array(s) to a die(s). The resistive -type NVM array(s) may be partially embedded within the contact layer of the integrated interposer.
申请公布号 WO2016069105(A1) 申请公布日期 2016.05.06
申请号 WO2015US48165 申请日期 2015.09.02
申请人 QUALCOMM INCORPORATED 发明人 LU, YU;RAMACHANDRAN, VIDHYA;KANG, SEUNG HYUK
分类号 H01L25/065;H01L23/498;H01L23/538 主分类号 H01L25/065
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