| 摘要 |
This photoelectric conversion element (10) is provided with a semiconductor substrate (1), an antireflection film (2), a passivation film (3), n-type amorphous semiconductor layers (4), p-type amorphous semiconductor layers (5), electrodes (6, 7), and a protective film (8). The antireflection film (2) is arranged on a light-receiving surface of the semiconductor substrate (1). The passivation film (3) is arranged on the back surface of the semiconductor substrate (1). In the in-plane direction of the semiconductor substrate (1), the n-type amorphous semiconductor layers (4) and the p-type amorphous semiconductor layers (5) are alternately arranged on the passivation film (3) separated by a prescribed interval. The electrodes (6) are arranged on the n-type amorphous semiconductor layers (4), and the electrodes (7) are arranged on the p-type amorphous semiconductor layers (5). The protective film (8) includes an insulation film and is arranged on the electrodes (6, 7) in contact with the electrodes (6, 7). |
