| 摘要 |
Anti-fuse memory (2b) is provided with a rectifying element (3) having a semiconductor junction structure configured such that the voltage values of a memory gate electrode (G) and a word line (WL1) cause voltage applied to the word line (WL1) from the memory gate electrode (G) to become reverse bias voltage, said anti-fuse memory (2b) being configured such that the voltage applied to the word line (WL1) from the memory gate electrode (G) is cut off by the rectifying element (3). As a result, the anti-fuse memory (2b) does not use conventional control circuits and does not require a switching transistor for selectively applying voltage to a conventional memory capacitor or a switch control circuit for performing on-off operation of the switching transistor, thus making it possible to decrease the size of the anti-fuse memory (2b) accordingly. Also provided is a semiconductor storage device. |
