发明名称 |
OXIDE AND METHOD FOR FORMING THE SAME |
摘要 |
An oxide that can be used for a semiconductor in a transistor or the like is formed. After a sputtering gas is supplied to a deposition chamber, a plasma including ions of the sputtering gas in the vicinity of a target. The ion of the sputtering gas is accelerated and collides with a target, so that flat-plate particles and atoms included in the target are separated from the target. Surfaces of the plurality of flat-plate particles are negatively charged in plasma. One of the flat-plate particles negatively charged is deposited with a surface facing a substrate. Another flat-plate particle is deposited in a region apart from the one flat-plate particle over the substrate while repelling the one flat-plate particle. An atom and an aggregate of atoms are inserted in a gap between the one flat-plate particle and the another flat-plate particle and grow in the lateral direction in the gap between the flat-plate particles, so that the gap between the one flat-plate particle and the another flat-plate particle is filled. |
申请公布号 |
WO2016067122(A1) |
申请公布日期 |
2016.05.06 |
申请号 |
WO2015IB54337 |
申请日期 |
2015.06.09 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI |
分类号 |
C23C14/34;H01L21/363;H01L21/8234;H01L27/088;H01L27/146;H01L29/786 |
主分类号 |
C23C14/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|