| 摘要 |
A method of storing a discrete analog sequence may include programming, in an ordered sequence, a set of targeted analog values in a number of memristive bit cells and attenuating writing errors by noise-shaping. A resistive random access memory may include a number of memristive devices electrically coupled together to form an array of memristive devices, each memristive device including a field-effect transistor and a memristor electrically coupled with the filed-effect transistor wherein a discrete analog sequence is stored on the resistive random access memory cell by programming, in an ordered sequence, a set of targeted analog values in the memristive bit cells and attenuating writing errors by noise-shaping. |
