LOW-TEMPERATURE FORMATION OF THIN-FILM STRUCTURES

摘要

Methods for low-temperature formation of one or more thin-film semiconductor structures on a substrate are described wherein the method comprises the steps of: forming a (poly)silane layer over a substrate; transforming one or more parts of said (poly)silane layer in one or more thin-film solid-state semiconductor structures by exposing said one or more parts with light from an UV source.