| 摘要 |
In the case of suppressing, by reducing a saturated current using a single semiconductor switching element, a loss when a load is short-circuited, in methods wherein a channel length is increased, the saturated current and the on-resistance are in the tradeoff relationship, and the on-resistance increases when the saturated current is reduced. There has been a problem of reducing the saturated current without increasing the on-resistance for the purpose of reducing the loss of the semiconductor switching element. The present invention solves the problem by having a narrowed region where a body region and an insulating film are facing each other with a drift region therebetween. |
