发明名称 |
PROTECTIVE MATERIAL TO PREVENT SHORT CIRCUITS IN THREE-DIMENSIONAL MEMORY DEVICE |
摘要 |
In a three-dimensional stacked non-volatile memory device, a short circuit is prevented in a select gate layer by providing a protective material such as a diode, capacitor, linear resistor or varistor between select gate lines and a remaining portion of the select gate layer. Charges which are accumulated in the select gate lines due to plasma etching are therefore prevented from discharging through the remaining portion in a short circuit path when the select gate lines are driven. The protective material can comprise a p-n diode, an n-i-n or p-i-p resistor, a thin oxide layer between doped polysilicon layers in a capacitor, or a variable-resistance material such as ZnO2 between oxide layers in a varistor. |
申请公布号 |
WO2016022319(A3) |
申请公布日期 |
2016.05.06 |
申请号 |
WO2015US42302 |
申请日期 |
2015.07.27 |
申请人 |
SANDISK TECHNOLOGIES INC. |
发明人 |
YUAN, JIAHUI;PACHAMUTHU, JAYAVEL;DONG, YINGDA;ZHAO, WEI |
分类号 |
H01L27/115;G01R31/02;G01R31/26 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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