发明名称 |
METHODS FOR FORMING A METAL SILICIDE INTERCONNECTION NANOWIRE STRUCTURE |
摘要 |
Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide layer on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide layer in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer. In another embodiment, a method includes supplying a deposition gas mixture including at least a metal containing precursor and a reacting gas on a surface of a substrate, forming a plasma in the presence of the deposition gas mixture by exposure to microwave power, exposing the plasma to light radiation, and forming a metal silicide layer on the substrate from the deposition gas. |
申请公布号 |
WO2016069132(A1) |
申请公布日期 |
2016.05.06 |
申请号 |
WO2015US50845 |
申请日期 |
2015.09.18 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MEBARKI, BENCHERKI;LAKSHMANAN, ANNAMALAI;SINGH, KAUSHAL K.;COCKBURN, ANDREW;GODET, LUDOVIC;MA, PAUL F.;NAIK, MEHUL B. |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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