ION IMPLANTATION PROCESSES AND APPARATUS

摘要

An ion source apparatus which generates dopant species in a manner enabling low vapor pressure dopant source materials to be employed. The ion source apparatus ( 10 ), comprising: an ion source chamber (12); and a consumable structure in or associated with the ion source chamber (12), said consumable structure comprising a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber. For example, the consumable structure is a dopant gas feed line (14) comprising a pipe or conduit having an interior layer formed of a solid dopant source material.