| 摘要 |
A memory system able to store information using a hybrid volatile and nonvolatile memory device organized in a stacking configuration is disclosed. The memory system, in one aspect, includes memory components, a drain select gate ("DSG") transistor, and a capacitor component. Each memory component, in one example, includes a source terminal, a gate terminal, a drain terminal, and a nonvolatile cell. The memory components are organized in a string formation and the components are interconnected between source terminals and drain terminals. The drain terminal of DSG transistor is coupled to the source terminal of a memory component and the gate terminal of DSG transistor is coupled to a DSG signal. The drain terminal of the capacitor is coupled to the source terminal of the first DSG transistor. The capacitor component is configured to perform a dynamic random-access memory ("DRAM") function. |
