THERMALLY TOLERANT PERPENDICULAR MAGNETIC ANISOTROPY COUPLED ELEMENTS FOR SPIN-TRANSFER TORQUE SWITCHING DEVICE

摘要

Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ) with an acceptable thermal barrier. A PMA coupling layer is deposited between a first PMA layer and a second PMA layer to form the composite PMA layer. The composite PMA layer may be incorporated in PMA type MRAM cells or in-plane type MRAM cells.

主权项

1. A magnetic tunnel junction (MTJ) comprising:
a reference layer; a composite perpendicular magnetic anisotropy (PMA) layer including a first PMA layer, a second PMA layer, and a PMA coupling layer between the first PMA layer and the second PMA layer; and a tunnel barrier layer between the reference layer and the composite PMA layer.