PIEZOELECTRONIC TRANSISTOR WITH CO-PLANAR COMMON AND GATE ELECTRODES

摘要

A method of forming a piezoelectronic transistor (PET), the PET, and a semiconductor device including the PET are described. The method includes forming a piezoelectric (PE) element with a trench and forming a pair of electrodes on the PE element in a coplanar arrangement in a first plane, both of the pair of electrodes being on a same side of the PE element. The method also includes forming a piezoresistive (PR) element above the pair of electrodes and forming a clamp above the PR element. Applying a voltage to the pair of electrodes causes displacement of the PE element perpendicular to the first plane.

主权项

1. A piezoelectronic transistor (PET), comprising:
a piezoelectric (PE) element with a trench formed therein; a pair of electrodes disposed on the PE element in a coplanar arrangement in a first plane, both of the pair of electrodes being on a same side of the PE element; a piezoresistive (PR) element above the pair of electrodes; and a clamp above the PR element, wherein the PE element is configured to be displaced perpendicular to the first plane, based on a voltage applied to the pair of electrodes.