发明名称 |
MULTILAYER MIM CAPACITOR |
摘要 |
A semiconductor capacitor and method of fabrication is disclosed. A MIM stack, having alternating first-type and second-type metal layers (each separated by dielectric) is formed in a deep cavity. The entire stack can be planarized, and then patterned to expose a first area, and selectively etched to recess all first metal layers within the first area. A second selective etch is performed to recess all second metal layers within a second area. The etched recesses can be backfilled with dielectric. Separate electrodes can be formed; a first electrode formed in said first area and contacting all of said second-type metal layers and none of said first-type metal layers, and a second electrode formed in said second area and contacting all of said first-type metal layers and none of said second-type metal layers. |
申请公布号 |
US2016126305(A1) |
申请公布日期 |
2016.05.05 |
申请号 |
US201514851345 |
申请日期 |
2015.09.11 |
申请人 |
International Business Machines Corporation |
发明人 |
Cheng Kangguo;Ervin Joseph;Pei Chengwen;Todi Ravi M.;Wang Geng |
分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method to form a deep-trench capacitor comprising:
providing substrate having a stack of metal layers in a cavity, said stack comprising first-type metal layers and second-type metal layers, wherein each adjacent pair of said stack comprises one first-type metal layer and one second-type metal layer, said stack further comprising an insulating layer between said adjacent pairs; exposing a cross section of said stack; etching said first-type metal layers within a first area of said cross section while not appreciably etching said second-type metal layers; etching said second-type metal layers within a second area of said cross section while not appreciably etching said first-type metal layers. |
地址 |
Armonk NY US |