CMOS IMAGE SENSOR WITH ENHANCED DYNAMIC RANGE

摘要

An image sensor includes a semiconductor substrate having a main surface, a transfer transistor having a transfer gate disposed on the main surface, a light-sensing structure on one side of the transfer gate, a floating diffusion node on the other side of the transfer gate, a reset transistor serially connected to the transfer transistor via the floating diffusion node, a source-follower transistor having a source-follower gate, and a vertical capacitor having a first vertical electrode plate and a second vertical electrode plate. The first vertical electrode plate is electrically connected to the source-follower gate and the floating diffusion node.

主权项

1. An image sensor, comprising:
a semiconductor substrate having a main surface; a transfer transistor having a transfer gate disposed on the main surface of the semiconductor substrate; a light-sensing structure disposed on one side of the transfer gate in the semiconductor substrate; a floating diffusion node on the other side of the transfer gate in the semiconductor substrate; a reset transistor serially connected to the transfer transistor through the floating diffusion node; a source-follower transistor comprising a source-follower gate; and a vertical capacitor structure having a first vertical electrode plate and a second vertical electrode plate, wherein the first vertical electrode plate is electrically coupled to the source-follower gate and the floating diffusion node.