NONVOLATILE MEMORY DEVICES HAVING SINGLE-LAYERED GATES

摘要

A nonvolatile memory device includes an active region extending in a first direction, a first single-layered gate intersecting the active region and extending in a second direction, a second single-layered gate intersecting the active region and extending in the second direction, and a selection gate intersecting the active region. The selection gate includes a first selection gate main line and a second selection gate main line that intersect the active region to be parallel with the first and second single-layered gates, a selection gate interconnection line that connects a first end of the first selection gate main line to a first end of the second selection gate main line, and a selection gate extension that extends from a portion of the selection gate interconnection line to be disposed between first ends of the first and second single-layered gates.

主权项

1. A nonvolatile memory device comprising:
an active region extending in a first direction; a first single-layered gate intersecting the active region and extending in a second direction; a second single-layered gate intersecting the active region to be spaced apart from the first single-layered gate in the first direction and extending in the second direction; and a selection gate including a first selection gate main line and a second selection gate main line that intersect the active region to be parallel with the first and second single-layered gates, a selection gate interconnection line that connects a first end of the first selection gate main line to a first end of the second selection gate main line, and a selection gate extension that extends from a portion of the selection gate interconnection line to be disposed between first ends of the first and second single-layered gates, wherein the first selection gate main line is at a side of the first single-layered gate, opposite to the second single-layered gate; and wherein the second selection gate main line is at a side of the second single-layered gate, opposite to the first single-layered gate.