SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

摘要

A method of forming a semiconductor structure includes the steps: providing a substrate; forming a dielectric over the substrate; forming an opening recessed under a top surface of the dielectric; forming a barrier layer on a sidewall of the opening; performing a physical vapor deposition (PVD) to form a copper layer over the barrier layer, a corner of the opening intersecting with the top surface and the top surface with a predetermined resputter ratio so that the ratio of the thickness of the copper layer on the barrier layer and the thickness of the copper layer over the top surface is substantially greater than 1.

主权项

1. A method of forming a semiconductor structure, comprising:
providing a substrate; forming a dielectric over the substrate; forming a trench recessed under a top surface of the dielectric; forming a barrier layer on a sidewall of the trench; and depositing a first copper layer over the barrier layer, wherein a ratio of the thickness of the first copper layer on the barrier layer on the sidewall and the thickness of the first copper layer over the top surface is greater than 1.