DIELECTRIC TONE INVERSION MATERIALS

摘要

A process for patterning a hard mask material with line-space patterns below a 30 nm pitch and a 15 nm critical dimension by employing a spin-on titanium-silicon (TiSi) polymer or oligomer as a tone inversion material is provided. The spin-on TiSi material is spin-coated over a patterned OPL that includes a first pattern generated from a DSA based process. The spin-on TiSi material fill trenches within the patterned OPL to form a tone inverted pattern by removing the patterned OPL selective to the spin-on TiSi material. The inverted pattern is a complementary pattern to the first pattern, and is transferred into the underlying hard mask material by an anisotropic etch.

主权项

1. A process for patterning a hard mask material with line-space patterns below a 30 nm pitch and a 15 nm critical dimension by employing a spin-on titanium silicon (TiSi) material as a tone inversion material, comprising:
patterning an organic planarization (OPL) layer over a hard mask material with a line-space pattern below the 30 nm pitch and the 15 nm critical dimension; formulating, filling, and overcoating the spin-on TiSi material into a patterned OPL layer; etching back an excessive spin-on TiSi material, the excessive spin-on TiSi material overcoating the patterned OPL layer; extracting the patterned OPL layer to achieve an inverted pattern; and etching the inverted pattern into the hard mask material. wherein: the step of formulating, filling, and overcoating the spin-on TiSi material into the patterned OPL layer includes: (i) a first bake at an elevated temperature of 150 degrees Celsius for 60 seconds; and (ii) a second bake at an elevated temperature of 200 degrees Celsius for 60 seconds.