| 摘要 |
A device for monitoring a power semiconductor switch includes a circuit section for applying to the power semiconductor switch an HF voltage having a frequency above a switching threshold of the power semiconductor switch, a shunt resistor for detecting an actual HF current resulting from application of the HF voltage to the power semiconductor switch, a monitoring circuit for comparing the actual HF current with an expected HF current that depends on a switching state of the power semiconductor switch when the HF voltage is applied to the power semiconductor switch, and a comparator for generating a power semiconductor status signal depending on a result of the comparison. A corresponding method for monitoring a power semiconductor switch of this type is also described. |
