PROTECTION CIRCUIT OF SEMICONDUCTOR DEVICE

摘要

A protection circuit of a semiconductor device includes a high electron mobility transistor and a protection element. Between the drain and the gate of the high electron mobility transistor, the protection element includes: a thyristor; and a first resistor connected in series to the thyristor. Between the source and the gate of the high electron mobility transistor, the protection element includes: a second resistor and an interrupter that is connected in series to the second resistor. The interrupter interrupts a flow of a current between the drain and the gate when the thyristor is turned off, and the interrupter permits the current to flow between the drain and the gate when the thyristor is turned on.

主权项

1. A protection circuit of a semiconductor device, comprising:
a high electron mobility transistor as a semiconductor switching element that is connected to a load and turns on or off an electric power supply to the load; and a protecting element that includes:
a thyristor connected in a forward direction and a first resistor connected in series to the thyristor between a drain and a gate of the high electron mobility transistor; anda second resistor and an interrupter connected in series to the second resistor between a source and the gate of the high electron mobility transistor, wherein the interrupter interrupts a flow of a current between the drain and the gate of the high electron mobility transistor when the thyristor is turned off, and wherein the interrupter permits the flow of the current between the drain and the gate of the high electron mobility transistor when the thyristor is turned on.