FULLERENE DERIVATIVE AND N-TYPE SEMICONDUCTOR MATERIAL

摘要

The present invention is a material having excellent performance as an n-type semiconductor material, in particular for organic thin-film solar cells.;The present invention provides an n-type semiconductor consisting of a fullerene derivative having a purity of 99% or more, the fullerene derivative being represented by formula (1):;wherein ring A represents C60 fullerene;R1 represents a hydrogen atom, alkyl optionally having at least one substituent, or aryl optionally having at least one substituent; andAr represents aryl optionally substituted with at least one alkyl group.

主权项

1. An n-type semiconductor material consisting of a fullerene derivative having a purity of 99% or more as defined below, the fullerene derivative being represented by formula (1): wherein ring A represents C60 fullerene; R1 represents a hydrogen atom, alkyl optionally having at least one substituent, or aryl optionally having at least one substituent; and Ar represents aryl optionally substituted with at least one alkyl group, the purity being defined by the following equation:
Purity (%)=100−Dmax (%) wherein the Dmax is the maximum value among the absolute value of the difference between an analysis value and a theoretical value obtained in elemental analysis of carbon, the absolute value of the difference between an analysis value and a theoretical value obtained in elemental analysis of hydrogen, and the absolute value of the difference between an analysis value and a theoretical value obtained in elemental analysis of nitrogen.