INTEGRATING A PIEZORESISTIVE ELEMENT IN A PIEZOELECTRONIC TRANSISTOR

摘要

A semiconductor device, a piezoelectronic transistor (PET) device, and a method of fabricating the PET device are described. The method includes forming a first stack of dielectric layers, forming a first metal layer over the first stack, forming a piezoelectric (PE) material on the first metal layer, and forming a second metal layer on the PE material. The method also includes forming a piezoresistive (PR) element on the second metal layer through a gap in a first membrane formed a distance d above the second metal layer.

主权项

1. A piezoelectronic transistor (PET) device, comprising:
a first stack including dielectric layers; a first metal layer formed over the first stack; a piezoelectric (PE) material formed over the first metal layer; a second metal layer on the PE material; and a layer comprising a piezoresistive (PR) element and a passivation layer disposed on the second metal layer, the passivation layer filling a gap in a membrane to hermetically seal the PET device.