METHOD AND STRUCTURE TO IMPROVE FILM STACK WITH SENSITIVE AND REACTIVE LAYERS

摘要

Embodiments of the present disclosure generally relate to a film stack including layers of group III-V semiconductor materials. The film stack includes a phosphorous containing layer deposited over a silicon substrate, a GaAs containing layer deposited on the phosphorous containing layer, and an aluminum containing layer deposited on the GaAs containing layer. The GaAs containing layer between the phosphorous containing layer and the aluminum containing layer improves the surface smoothness of the aluminum containing layer.

主权项

1. A buffer structure, comprising:
a phosphorous containing layer deposited over a silicon substrate; a GaAs containing layer deposited on the phosphorous containing layer; and an aluminum containing layer deposited on the GaAs containing layer.