LATTICE MATCHED ASPECT RATIO TRAPPING TO REDUCE DEFECTS IN III-V LAYER DIRECTLY GROWN ON SILICON

摘要

A structure having application to electronic devices includes a III-V layer having high crystal quality and a low defect density on a lattice mismatched substrate. Trenches are formed in a layer of III-V semiconductor material grown on a substrate having a different lattice constant. Dielectric material is deposited within the trenches, forming dielectric regions. A portion of the layer of III-V material is removed, leaving new trenches defined by the dielectric regions. A new layer of III-V semiconductor material having reduced defect density is grown on the remaining portion of the originally deposited III-V semiconductor layer and within the trenches defined by the dielectric regions.

主权项

1. A method comprising:
obtaining a structure including a semiconductor substrate having a first lattice constant, a first epitaxial layer of III-V semiconductor material having a second lattice constant different from the first lattice constant directly adjoining a top surface of the semiconductor substrate, and a plurality of first trenches extending vertically within the first epitaxial layer of III-V semiconductor material, the first trenches having bottom ends within the first epitaxial layer of III-V semiconductor material and terminating a distance above the top surface of the semiconductor substrate; filling the first trenches with a dielectric material to form a plurality of dielectric regions within the first epitaxial layer of III-V semiconductor material, each dielectric region having a bottom surface adjoining a top surface of the first epitaxial layer of III-V semiconductor material; removing a portion of the first epitaxial layer of III-V semiconductor material to form a plurality of vertically oriented second trenches between the dielectric regions, and epitaxially growing a second layer of III-V semiconductor material directly on the first epitaxial layer of III-V semiconductor material and within the plurality of second trenches.