发明名称 NONVOLATILE MEMORY SYSTEM AND DATA RECOVERY METHOD THEREOF
摘要 A nonvolatile memory system includes a nonvolatile memory device including a plurality of memory cells; and a memory controller suitable for recovering normal data based on a recovery read level interval when an error occurs in the normal data read from the memory cells by using a reference read level, wherein the memory controller generates N distribution measurement values by measuring distribution values of threshold voltage levels of the memory cells at N respective distribution read levels, which have a preset read level interval with the reference read level serving as a center, and determines the recovery read level interval through calculating variations of the N distribution measurement values by using a linear equation, where ‘N’ is a natural number equal to or larger than 2.
申请公布号 US2016124805(A1) 申请公布日期 2016.05.05
申请号 US201514676341 申请日期 2015.04.01
申请人 SK hynix Inc. 发明人 LEE Hyung-Min
分类号 G06F11/10;G11C29/02;G11C29/52 主分类号 G06F11/10
代理机构 代理人
主权项 1. A nonvolatile memory system comprising: a nonvolatile memory device including a plurality of memory cells; and a memory controller suitable for recovering normal data based on a recovery read level interval when an error occurs in the normal data read from the memory cells by using a reference read level, wherein the memory controller generates N distribution measurement values by measuring distribution values of threshold voltage levels of the memory cells at N distribution read levels, which have a preset read level interval with the reference read level serving as a center, and determines the recovery read level interval through calculating variations of the N distribution measurement values by using a linear equation, where ‘N’ is a natural number equal to or greater than 2.
地址 Gyeonggi-do KR