发明名称 |
NONVOLATILE MEMORY SYSTEM AND DATA RECOVERY METHOD THEREOF |
摘要 |
A nonvolatile memory system includes a nonvolatile memory device including a plurality of memory cells; and a memory controller suitable for recovering normal data based on a recovery read level interval when an error occurs in the normal data read from the memory cells by using a reference read level, wherein the memory controller generates N distribution measurement values by measuring distribution values of threshold voltage levels of the memory cells at N respective distribution read levels, which have a preset read level interval with the reference read level serving as a center, and determines the recovery read level interval through calculating variations of the N distribution measurement values by using a linear equation, where ‘N’ is a natural number equal to or larger than 2. |
申请公布号 |
US2016124805(A1) |
申请公布日期 |
2016.05.05 |
申请号 |
US201514676341 |
申请日期 |
2015.04.01 |
申请人 |
SK hynix Inc. |
发明人 |
LEE Hyung-Min |
分类号 |
G06F11/10;G11C29/02;G11C29/52 |
主分类号 |
G06F11/10 |
代理机构 |
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代理人 |
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主权项 |
1. A nonvolatile memory system comprising:
a nonvolatile memory device including a plurality of memory cells; and a memory controller suitable for recovering normal data based on a recovery read level interval when an error occurs in the normal data read from the memory cells by using a reference read level, wherein the memory controller generates N distribution measurement values by measuring distribution values of threshold voltage levels of the memory cells at N distribution read levels, which have a preset read level interval with the reference read level serving as a center, and determines the recovery read level interval through calculating variations of the N distribution measurement values by using a linear equation, where ‘N’ is a natural number equal to or greater than 2. |
地址 |
Gyeonggi-do KR |