| 发明名称 |
THICK-SILVER LAYER INTERFACE |
| 摘要 |
A semiconductor device and a method of manufacturing the same include a die and a planar thermal layer, and a thick-silver layer having a thickness of at least four (4) micrometers disposed directly onto a first planar side of the planar thermal layer, as well as a metallurgical die-attach disposed between the thick-silver layer and the die, the metallurgical die-attach directly contacting the thick-silver layer. |
| 申请公布号 |
US2016126206(A1) |
申请公布日期 |
2016.05.05 |
| 申请号 |
US201414530285 |
申请日期 |
2014.10.31 |
| 申请人 |
Viswanathan Lakshminarayan;Molla Jaynal A. |
发明人 |
Viswanathan Lakshminarayan;Molla Jaynal A. |
| 分类号 |
H01L23/00;H01L23/373;H01L23/367 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a die; a planar thermal layer; a thick-silver layer comprising a thickness of at least four (4) micrometers disposed directly onto a first planar side of the planar thermal layer; and a metallurgical die-attach disposed between the thick-silver layer and the die, the metallurgical die-attach directly contacting the thick-silver layer. |
| 地址 |
Phoenix AZ US |
