SEMICONDUCTOR DEVICE

摘要

A first switching element and a second switching element are thermally connected to each other since the first switching element and the second switching element are fixed on a second substrate. An upper arm is capable of increasing the current capacity of the semiconductor device because of the parallel connection of the first switching element and the second switching element. The lower arm is capable of increasing the current capacity of the semiconductor device because of the parallel connection of the first switching element and the second switching element.

主权项

1. A semiconductor device comprising:
a first substrate formed of an electric conductor; a first diode having a first cathode electrode and a first anode electrode, the first cathode electrode being electrically connected to the first substrate; a second substrate formed of an electric conductor; a first switching element having a first emitter electrode, a first collector electrode and a first gate electrode, the first collector electrode being electrically connected to the second substrate; a second switching element having a second emitter electrode, a second collector electrode and a second gate electrode, the second collector electrode being electrically connected to the second substrate; a first terminal electrically connected to the second substrate; a second terminal electrically connected to the first anode electrode; a third terminal electrically connected to the first emitter electrode, the second emitter electrode and the first substrate; and a molding resin covering the first substrate, the first diode, the second substrate, the first switching element and the second switching element while exposing portions of the first terminal, the second terminal and the third terminal to the outside.