发明名称 |
CONDUCTIVE FILM COATED SUBSTRATE, MULTILAYER REFLECTIVE FILM COATED SUBSTRATE, REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
Provided is a conductive film coated substrate, including a conductive film formed thereon. In a relationship between a bearing area (%) and a bearing depth (nm) that are obtained by measuring, with an atomic force microscope, a region of 1 μm×1 μm of a surface of the conductive film, the surface of the conductive film satisfies a relationship that (BA70−BA30)/(BD70−BD30) is 15 or more and 260 or less (%/nm), and a maximum height (Rmax) is 1.3 nm or more and 15 nm or less. |
申请公布号 |
US2016124298(A1) |
申请公布日期 |
2016.05.05 |
申请号 |
US201414896411 |
申请日期 |
2014.09.22 |
申请人 |
HOYA CORPORATION |
发明人 |
HAMAMOTO Kazuhiro;USUI Yoichi |
分类号 |
G03F1/24;G03F7/20;B32B7/02 |
主分类号 |
G03F1/24 |
代理机构 |
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代理人 |
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主权项 |
1. A conductive film coated substrate comprising:
a substrate for a mask blank for use in lithography; and a conductive film formed on one main surface of the substrate; wherein: in a relationship between a bearing area (%) and a bearing depth (nm) that are obtained by measuring, with an atomic force microscope, a region of 1 μm×1 μm of a surface of the conductive film, when a bearing area of 30% is defined as BA30, a bearing area of 70% is defined as BA70, and bearing depths corresponding to the bearing areas of 30% and 70% are defined as BD30 and BD70, respectively, the surface of the conductive film satisfies a relationship that (BA70−BA30)/(BD70−BD30) is 15 or more and 260 or less (%/nm), and a maximum height (Rmax) is 1.3 nm or more and 15 nm or less. |
地址 |
Tokyo JP |