BROADBAND RADIO FREQUENCY POWER AMPLIFIERS, AND METHODS OF MANUFACTURE THEREOF

摘要

An embodiment of an amplifier has a bandwidth defined by low and upper cutoff frequencies. The amplifier includes an input impedance matching circuit and a transistor. The transistor has a gate, a first current conducting terminal coupled to an output of the amplifier, and a second current conducting terminal coupled to a reference node. The input impedance matching circuit has a filter input coupled to an input of the amplifier, a filter output coupled to the gate of the transistor, and a multiple pole filter coupled between the filter input and the filter output. A first pole of the filter is positioned at a first frequency within the bandwidth, and a second pole of the filter is positioned at a second frequency outside the bandwidth. The input impedance matching circuit is configured to filter the input RF signal to produce a filtered RF signal at the filter output.

主权项

1. A packaged amplifier device having a bandwidth defined by a range of frequencies between a low cutoff frequency and a upper cutoff frequency, the amplifier device comprising:
an input lead configured to receive an input radio frequency (RF) signal; an output lead configured to produce an amplified RF signal; a transistor having a gate, a first current conducting terminal coupled to the output lead, and a second current conducting terminal coupled to a reference node; and an input impedance matching circuit having a filter input coupled to the input lead, a filter output coupled to the gate of the transistor, and a plurality of passive components that form a multiple pole filter, wherein a first pole of the filter is positioned at a first frequency within the bandwidth, and a second pole of the filter is positioned at a second frequency outside the bandwidth, and the input impedance matching circuit is configured to filter the input RF signal to produce a filtered RF signal at the filter output.