CONCAVE WORD LINE AND CONVEX INTERLAYER DIELECTRIC FOR PROTECTING A READ/WRITE LAYER

摘要

An alternating stack of electrically conductive layers and electrically insulating layers is formed over global bit lines formed on a substrate. The alternating stack is patterned to form a line stack of electrically conductive lines and electrically insulating lines. Trench isolation structures are formed within each trench to define a plurality of memory openings laterally spaced from one another by the line stack in one direction and by trench isolation structures in another direction. The electrically conductive lines are laterally recessed relative to sidewall surfaces of the electrically insulating lines. A read/write memory material is deposited in recesses, and is anisotropically etched so that a top surface of a global bit line is physically exposed at a bottom of each memory opening. An electrically conductive bit line is formed within each memory opening to form a resistive random access memory device.

主权项

1. A memory device, comprising:
a substrate having a major surface; and a first stack comprising an alternating plurality of electrically conductive lines elongated in a first direction substantially parallel to the major surface of the substrate and electrically insulating lines elongated in the first direction;wherein:
each of the plurality of electrically conductive lines is recessed in a second direction below an adjacent electrically insulating line to form a first plurality of recesses; the second direction is substantially perpendicular to the first direction and is substantially parallel to the major surface of the substrate; and each recess of the first plurality of recesses is formed adjacent to a respective one of the plurality of electrically conductive lines and overhung by a respective one of the plurality of electrically insulating lines in the first stack; a read/write memory material at least partially filling each of the first plurality of recesses; and an electrically conductive bit line elongated in a third direction substantially perpendicular to the major surface of the substrate, wherein the electrically conductive bit line is in electrical contact with the read/write memory material.