发明名称 ELECTRICALLY CONDUCTIVE INTERCONNECT INCLUDING VIA HAVING INCREASED CONTACT SURFACE AREA
摘要 An interconnect structure includes a first dielectric layer and a second dielectric layer each extending along a first axis to define a height and a second axis opposite the first axis to define a length. A capping layer is interposed between the first dielectric layer and the second dielectric layer. At least one electrically conductive feature is embedded in at least one of the first dielectric layer and the second dielectric layer. At least one electrically conductive via extends through the second dielectric layer and the capping layer. The via has an end that contacts the conductive feature. The end includes a flange having at least one portion extending laterally along the first axis to define a contact area between the via and the at least one conductive feature.
申请公布号 US2016126183(A1) 申请公布日期 2016.05.05
申请号 US201414533636 申请日期 2014.11.05
申请人 International Business Machines Corporation 发明人 Chen Hsueh-Chung;Demarest James J.;Teehan Sean;Yang Chih-Chao
分类号 H01L23/522;H01L23/532;H01L21/768;H01L23/528 主分类号 H01L23/522
代理机构 代理人
主权项 1. An interconnect structure, comprising: a first dielectric layer and a second dielectric layer each extending along a first axis to define a height and a second axis opposite the first axis to define a length; a capping layer interposed between the first dielectric layer and the second dielectric layer; at least one electrically conductive feature formed in at least one of the first dielectric layer and the second dielectric layer; and at least one electrically conductive via extending through the second dielectric layer and the capping layer, and having an end that contacts the at least one electrically conductive feature, the end including a flange having at least one portion extending laterally along the second axis to define a contact area between the via and the at least one conductive feature.
地址 Armonk NY US