发明名称 |
Method for Processing a Semiconductor Wafer Using a Thin Edge Carrier Ring |
摘要 |
A method for processing a semiconductor wafer in a PECVD deposition chamber with a circular pedestal and a recessed portion formed around the outer top surface of the pedestal. The method may include using a circular wafer carrier ring with a recessed portion. |
申请公布号 |
US2016126090(A1) |
申请公布日期 |
2016.05.05 |
申请号 |
US201614990999 |
申请日期 |
2016.01.08 |
申请人 |
Texas Instruments Incorporated |
发明人 |
Song Jian;Pesina Ruben Anthony;Avala Kamal |
分类号 |
H01L21/02;B08B9/08;B08B7/00;H01L21/677 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method, comprising:
placing a carrier ring inside a deposition chamber, the carrier ring including a central region, a second region surrounding the central region, and an outer region surrounding the second region and recessing from a top surface of the second region; placing a semiconductor wafer into a receptacle defined by the central region and the second region of the carrier ring; releasing a deposition material in the deposition chamber; and retaining a portion of the deposition material by the outer region of the carrier ring. |
地址 |
Dallas TX US |