发明名称 Method for Processing a Semiconductor Wafer Using a Thin Edge Carrier Ring
摘要 A method for processing a semiconductor wafer in a PECVD deposition chamber with a circular pedestal and a recessed portion formed around the outer top surface of the pedestal. The method may include using a circular wafer carrier ring with a recessed portion.
申请公布号 US2016126090(A1) 申请公布日期 2016.05.05
申请号 US201614990999 申请日期 2016.01.08
申请人 Texas Instruments Incorporated 发明人 Song Jian;Pesina Ruben Anthony;Avala Kamal
分类号 H01L21/02;B08B9/08;B08B7/00;H01L21/677 主分类号 H01L21/02
代理机构 代理人
主权项 1. A method, comprising: placing a carrier ring inside a deposition chamber, the carrier ring including a central region, a second region surrounding the central region, and an outer region surrounding the second region and recessing from a top surface of the second region; placing a semiconductor wafer into a receptacle defined by the central region and the second region of the carrier ring; releasing a deposition material in the deposition chamber; and retaining a portion of the deposition material by the outer region of the carrier ring.
地址 Dallas TX US