| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A method of manufacturing a semiconductor device according to an embodiment includes forming an opening in a surface of an insulating layer which is provided in a surface of a first substrate and a surface of a second substrate. The method includes filling the opening with metal. The method includes activating the surface of the insulating layer. The method includes cleaning the surface of the metal filled in the opening of the first substrate using carbonated water. The method includes connecting the filled metal of the first substrate and the filled metal of the second substrate by bonding the insulating layer of the first substrate and the insulating layer of the second substrate. |
| 申请公布号 |
US2016126087(A1) |
申请公布日期 |
2016.05.05 |
| 申请号 |
US201514848855 |
申请日期 |
2015.09.09 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
TANIDA Kazumasa;Ashidate Hiroaki |
| 分类号 |
H01L21/02;H01L27/146 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming an opening in a surface of an insulating layer that is provided in a surface of a first substrate and a surface of a second substrate; filling the opening with metal; activating the surface of the insulating layer; cleaning a surface of the metal filled in the opening of the first substrate using carbonated water; and connecting the filled metal of the first substrate and the filled metal of the second substrate by bonding the insulating layer of the first substrate and the insulating layer of the second substrate. |
| 地址 |
Minato-ku JP |
