发明名称 NONVOLATILE MEMORY ERASURE METHOD AND DEVICE
摘要 Disclosed are non-volatile memory erasure method and device for solving the problem of unnecessary time expenditure and complex process of the current erasure operation. The method comprises: after receiving an erasure instruction, performing a pre-reading verification on the target erasure area corresponding to the erasure instruction; if the pre-reading verification passes, then performing an erasure operation on the target erasure area; if not, then performing pre-programming verification on the target erasure area, and after the pre-programming verification passes, performing the erasure operation on the target erasure area. The method of the present application can eliminate the unnecessary pre-programming verification process while ensuring the target erasure area is in a full-erasure state before the erasure operation, thus saving erasure time and simplifying the erasure process.
申请公布号 US2016125952(A1) 申请公布日期 2016.05.05
申请号 US201414897646 申请日期 2014.04.24
申请人 GIGADEVICE SEMICONDUCTOR (BEIJING) INC. 发明人 HU Hong;WANG Linkai
分类号 G11C16/34;G11C16/28;G11C16/14 主分类号 G11C16/34
代理机构 代理人
主权项 1. A non-volatile memory erasure method, wherein, the method comprises: after receiving an erasure instruction, performing pre-reading verification on a target erasure area corresponding to the erasure instruction; if the pre-reading verification passes, then performing an erasure operation on the target erasure area; and if the pre-reading verification fails, then performing pre-programming verification on the target erasure area, and after the pre-programming verification passes, performing the erasure operation on the target erasure area.
地址 Beijing CN