| 发明名称 |
SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF |
| 摘要 |
A semiconductor device includes a memory array including memory blocks, and an operation circuit suitable for performing a program loop and an erase loop on memory cells and selection transistors included in a selected memory block, wherein the operation circuit performs the program loop on the selection transistors so that a difference occurs between threshold voltages of the selection transistors and a target threshold voltage based on a difference between a cell current value of the selected memory block and a reference cell current value. |
| 申请公布号 |
US2016125946(A1) |
申请公布日期 |
2016.05.05 |
| 申请号 |
US201514660694 |
申请日期 |
2015.03.17 |
| 申请人 |
SK hynix Inc. |
发明人 |
JEON Yoo Nam;SHIM Keon Soo;OH Hae Soon;PARK Bong Yeol |
| 分类号 |
G11C16/14;G11C16/28 |
主分类号 |
G11C16/14 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a memory array including memory blocks; and an operation circuit suitable for performing a program loop and an erase loop on memory cells and selection transistors included in a selected memory block, wherein the operation circuit performs the program loop on the selection transistors so that a difference occurs between threshold voltages of the selection transistors and a target threshold voltage based on a difference between a cell current value of the selected memory block and a reference cell current value. |
| 地址 |
Gyeonggi-do KR |
