| 摘要 |
Disclosed herein are containing silicon-based films and compositions and methods for forming the same. The silicon-based films contain <50 atomic % of silicon. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 0 to about 55, y is about 35 to about 100, and z is about 0 to about 50 atomic weight (wt.) percent (%) as measured by XPS. In another aspect, the silicon-based films were deposited using at least one organosilicon precursor comprising two silicon atoms, at least one Si-Me group, and an ethylene or propylene linkage between the silicon atoms such as 1,4-disilapentane. |
| 主权项 |
1. A method for forming a silicon-based film on at least a portion of the surface of a substrate, the method comprising:
providing at least one surface of the substrate in a reactor; introducing at least one organosilicon precursor compound having the following Formulae A through D into the reactor:wherein X1 and X2 are each independently selected from a hydrogen atom, a halide atom, and an organoamino group having the formula NR1R2 wherein R1 is selected from a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a cyclic C3 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing group, and a C6 to C10 aryl group and R2 is selected from a hydrogen atom, a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a cyclic C3 to C10 alkyl group, a linear or branched C3 to C6 alkenyl group, a linear or branched C3 to C6 alkynyl group, a C1 to C6 dialkylamino group, a C6 to C10 aryl group, a linear C1 to C6 fluorinated alkyl group, a branched C3 to C6 fluorinated alkyl group, an electron withdrawing group, and a C4 to C10 aryl group and optionally wherein R1 and R2 are linked together to form a ring selected from a substituted or unsubstituted aromatic ring or a substituted or unsubstituted aliphatic ring; R3, R4, and R5 are each independently selected from a hydrogen atom and a methyl (CH3) group; and R6 is selected from a hydrogen atom, a linear C1 to C10 alkyl group, a branched C3 to C10 alkyl group, a cyclic C3 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing group, and a C6 to C10 aryl group; and
forming the silicon-based film on the at least one surface by a deposition process selected from a group consisting of chemical vapor deposition (CVD), low pressure chemical vapor deposition (LPCVD), plasma enhanced chemical vapor deposition (PECVD), cyclic chemical vapor deposition (CCVD), plasma enhanced cyclic chemical vapor deposition (PECCVD, atomic layer deposition (ALD), and plasma enhanced atomic layer deposition (PEALD) wherein the silicon-based film comprises from about 0 to about 50 atomic weight percent silicon as measured by X-ray photoelectron spectroscopy (XPS). |
