SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SUBSTRATE PROCESSING METHOD

摘要

A substrate processing apparatus includes a substrate having an SiGe film or Ge film exposed on at least a portion of a surface thereof, a process chamber configured to process the substrate, an etching gas supply part configured to supply an etching gas into the process chamber, a deposition gas supply part configured to supply gas containing at least an Si-containing gas as a deposition gas into the process chamber, and a control part configured to control the deposition gas supply part and the etching gas supply part so as to remove a Ge oxide film formed on a surface of the SiGe film or the Ge film by supplying the etching gas and to epitaxially grow an Si-containing film on at least the SiGe film or the Ge film by supplying the Si-containing gas after removing the Ge oxide film by the supply of the etching gas.

主权项

1. A substrate processing apparatus, comprising:
a process chamber configured to process a substrate having an SiGe film or a Ge film exposed on at least a portion of a surface of the substrate; an etching gas supply part configured to supply an etching gas into the process chamber; a deposition gas supply part configured to supply gas containing at least an Si-containing gas as a deposition gas into the process chamber; and a control part configured to control the deposition gas supply part and the etching gas supply part so as to remove a Ge oxide film formed on a surface of the SiGe film or the Ge film by supplying the etching gas and to epitaxially grow an Si-containing film on at least the SiGe film or the Ge film by supplying the Si-containing gas after removing the Ge oxide film by the supply of the etching gas.