METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device having a MOS gate structure includes forming a device structure on a semiconductor substrate; forming an interlayer dielectric to cover the device structure; forming a contact hole through the interlayer dielectric; forming a transition metal film (e.g., Ni) on a portion of the semiconductor substrate exposed by the contact hole; (e) forming a metal film (e.g., Ti) on the entire surface of the semiconductor substrate; forming an oxide film in the surface of the metal film; selectively removing the metal film in which the oxide film has been formed, to thereby expose the transition metal film; and (h) exposing, to a hydrogen plasma atmosphere, the semiconductor substrate in which the transition metal film and the oxide film have been exposed, to thereby cause the transition metal film to generate heat and react with the semiconductor substrate and form an ohmic contact there between.

主权项

1. A method for manufacturing a semiconductor device, comprising, in the order recited:
(a) forming a device structure on a surface of a semiconductor substrate; (b) forming an interlayer dielectric on the surface of the semiconductor substrate so as to cover the device structure; (c) forming a contact hole that penetrates the interlayer dielectric in a depth direction; (d) forming a transition metal film on a portion of the semiconductor substrate exposed by the contact hole; (e) forming a metal film on the entire surface of the semiconductor substrate on the side where the transition metal film has been formed, the metal film being effective to prevent hydrogen radicals and hydrogen atoms from penetrating downward and invading the device structure; (f) forming an oxide film in the surface of the metal film that is effective to firmly bound to the metal film and that is more chemically stable than the metal film; (g) selectively removing the metal film in which the oxide film has been formed, to thereby expose the transition metal film; and (h) exposing, to a hydrogen plasma atmosphere, the semiconductor substrate in which the transition metal film and the oxide film have been exposed, to thereby cause the transition metal film to generate heat so that the transition metal film and the semiconductor substrate can react with each other due to thermal conduction from the transition metal film and thereby form an ohmic contact there between.