SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

According to one embodiment, a semiconductor memory device includes a substrate that includes a first region and a second region; a stacked body that is disposed on the first region of the substrate and includes a plurality of first metal layers and a plurality of voids each of which is disposed between the plurality of first metal layers; a columnar portion that penetrates the stacked body, extends in a direction of stacking in the stacking body; a transistor that is disposed on the second region; and the interconnect portion that is disposed on the transistor and includes the plurality of first metal layers and a plurality of second metal layers each of which is disposed between the plurality of first metal layers. The transistor is electrically connected to the channel body or the first metal layer of the stacked body through a interconnect portion.

主权项

1. A semiconductor memory device comprising:
a substrate; a stacked body provided on the substrate and including a plurality of electrode layers separately stacked each other; a transistor provided on the substrate; and the interconnect portion electrically connected to the transistor and including a plurality of first metal layers separately stacked each other and a plurality of second metal layers provided between the plurality of first metal layers, the plurality of first metal layer having a same material as the plurality of electrode layer.